Product Summary

The BSM100GT120DN2 is an IGBT power module.

Parametrics

BSM100GT120DN2 absolute maximum ratings: (1)Collector-emitter voltage: 1200V; (2)Collector-gate voltage: 1200V; (3)Gate-emitter voltage: ±20A; (4)DC collector current: 150A; (5)Pulsed collector current: 300A; (6)Power dissipation per IGBT: 680W; (7)Storage temperature: -55 to 160℃.

Features

BSM100GT120DN2 features: (1)Three single switches; (2)Including fast free-wheeling diodes; (3)Package with insulated metal base plate; (4)Solderable terminals.

Diagrams

BSM100GT120DN2 diagram

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BSM100GT120DN2
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Data Sheet

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