(Hong Kong)
Product Summary
The APT10050JN is an enhancement mode high voltage power MOSFET.
Parametrics
APT10050JN absolute maximum ratings: (1)VDSS, drain-source voltage: 1000V; (2)ID, continuous drain current: 20.5A; (3)VGS, gate-soure voltage:±30V; (4)PD, Total power dissipation: 520W; (5)Operating and storage junction temperautre range: -55 to 150℃.
Features
APT10050JN characterstics: (1)BVDSS: 1000V; (2)ID(ON), on state drain current: 20.5A; (3)RDS(ON), Drain-source on-state resistance: 0.5Ohms; (4)IDSS: 250μA; (5)IGSS, gate-source leakage current: ±100nA; (6)VGS, gate threshold voltage: 4V.
Diagrams
| Image | Part No | Mfg | Description |  |
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 APT10050JN |
Other |
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Data Sheet |
Negotiable |
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| Image | Part No | Mfg | Description | |
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APT1001R1AN |
Other |
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Data Sheet |
Negotiable |
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APT1001R1AVR |
Other |
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Data Sheet |
Negotiable |
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APT1001R1BN |
Other |
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Data Sheet |
Negotiable |
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APT1001R1BVFR |
Other |
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Data Sheet |
Negotiable |
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APT1001R1HN |
Other |
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Data Sheet |
Negotiable |
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APT1001R1HVR |
Other |
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Data Sheet |
Negotiable |
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